English
简体中文
CAP CER 0.082UF 200V X7R 1812
DIODE GEN PURP 600V 3A SMB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 3 µA @ 600 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMB |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VS-T40HF100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 40A D-55 |
|
TSSA5U50HE3GTSC (Taiwan Semiconductor) |
5A, 50V, TRENCH SCHOTTKY RECTIFI |
|
SMBD1073LT1Rochester Electronics |
SS SOT23 SWCH DIO SPCL |
|
SS1F4-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 1A DO219AB |
|
RS1J-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
SS23-M3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 30V DO-214AA |
|
S5MB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 5A DO214AA |
|
VS-ETH1506SHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
SL26ASURGE |
2A -60V - SMA (DO-214AC) - RECTI |
|
MBRH120150GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 120A D-67 |
|
EGP10D-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
LXA08B600Power Integrations |
DIODE GEN PURP 600V 8A TO263AB |
|
1PS79SB30,115Nexperia |
DIODE SCHOTTKY 40V 200MA SOD523 |