RB521VM-40FH IS SUPER LOW V
SWITCH ROCKER DPDT 6A 125V
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 40 V |
电流 - 平均整流 (io): | 200mA |
电压 - 正向 (vf) (max) @ if: | 540 mV @ 200 mA |
速度: | Small Signal =< 200mA (Io), Any Speed |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 90 µA @ 40 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | SC-90, SOD-323F |
供应商设备包: | UMD2 |
工作温度 - 结: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FMY-1106SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
ACDBA260LR-HFComchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
|
SS1FH6HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
UGB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
APTDF500U40GRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 500A LP4 |
|
UFS510J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 5A DO214AB |
|
VS-MBR735-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
|
HS1D R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
EGF1BSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 1A SMA |
|
VS-8EWH06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
|
LL103A-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
|
SL1J-AQ-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
SM5406-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |