English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 60 V |
| 电流 - 平均整流 (io): | 8A |
| 电压 - 正向 (vf) (max) @ if: | 700 mV @ 8 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 60 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AD, Axial |
| 供应商设备包: | DO-201AD |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BAS316,135Nexperia |
DIODE GEN PURP 100V 250MA SOD323 |
|
AR4PKHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
|
JAN1N4148UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 200MA DO213 |
|
BAS16-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 75V 300MA SOT23 |
|
CDBQC0240LR-HFComchip Technology |
DIODE SCHOTTKY 40V 200MA 0402C |
|
VS-80EBU02HF4Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 80A POWERTAB |
|
HER305G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
CRH01(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 200V 1A SFLAT |
|
MBRB1660-E3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 16A TO263AB |
|
CFRA101-GComchip Technology |
DIODE GEN PURP 50V 1A DO214AC |
|
GS2JFL-TPMicro Commercial Components (MCC) |
2A,600V,STANDARD RECOVERY RECTIF |
|
1N5400RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
|
RB051LAM-40TRROHM Semiconductor |
DIODE SCHOTTKY 20V 3A PMDTM |
