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| 类型 | 描述 |
|---|---|
| 系列: | SBR® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Super Barrier |
| 电压 - 直流反向 (vr) (max): | 45 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 600 mV @ 5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 280 µA @ 45 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | PowerDI™ 5 |
| 供应商设备包: | PowerDI™ 5 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSL110A-F1-0000HF |
DIODE SCHOTTKY 100V 1A DO214AC |
|
SE15PBHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO220AA |
|
FR155G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1.5A DO204AC |
|
GL34K-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
BYW76TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
|
GL41DHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
NRVB120VLSFT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD123 |
|
BAT54WS-F2-0000HF |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
ES2JHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AA |
|
SF44G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 4A DO201AD |
|
1N647-1Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 400MA DO35 |
|
MUR440S V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO214AB |
|
BY550-200-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
