English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/231 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 200mA |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
| 速度: | Small Signal =< 200mA (Io), Any Speed |
| 反向恢复时间 (trr): | 4 ns |
| 电流 - 反向泄漏@ vr: | 100 nA @ 50 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NRVA4006T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A SMA |
|
SBE002-TL-WSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 50V 1A 6CPH |
|
SS3H9-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 90V DO-214AB |
|
S1BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
ES1JLHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
ES1JE-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A DO214AC |
|
UF5401NTE Electronics, Inc. |
R-100V 3A ULTRA FAST |
|
RURP15100-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1KV 15A TO220AC |
|
CDBM240L-GComchip Technology |
DIODE SCHOTTKY 40V 2A MINISMA |
|
VS-4EGH06-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A SMB |
|
VS-6EWX06FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
MBRD340RLGSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
|
BAT54WT-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 200MA SOT323 |
