类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 250 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 1000 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RB060LAM-40TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
D6020LTPWickmann / Littelfuse |
DIODE GEN PURP 600V 12.7A TO220 |
|
V12PM10-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
|
RS1JL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
VS-25F10MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 25A DO203AA |
|
40HF60Solid State Inc. |
REC 40AMP 600V DO5 |
|
BAV19WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD323 |
|
JAN1N645-1Roving Networks / Microchip Technology |
DIODE GEN PURP 225V 400MA DO35 |
|
VS-ETU1506-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220-2 |
|
VS-18TQ035STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 18A D2PAK |
|
VS-71HF100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |
|
1N5391-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AL |
|
RB051L-40TE25ROHM Semiconductor |
DIODE SCHOTTKY 20V 3A PMDS |