







 
                            FIXED IND 2.2UH 650MA 300 MOHM
 
                            CRYSTAL 20.0000MHZ 10PF SMD
 
                            DIODE GEN PURP 1KV 1A DO204AL
 
                            IC RF SWITCH DPDT 6GHZ 6MLPD
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Box (TB) | 
| 零件状态: | Active | 
| 二极管型: | Standard | 
| 电压 - 直流反向 (vr) (max): | 1000 V | 
| 电流 - 平均整流 (io): | 1A | 
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 1 A | 
| 速度: | Standard Recovery >500ns, > 200mA (Io) | 
| 反向恢复时间 (trr): | 2 µs | 
| 电流 - 反向泄漏@ vr: | 1 µA @ 1000 V | 
| 电容@vr, f: | - | 
| 安装类型: | Through Hole | 
| 包/箱: | DO-204AL, DO-41, Axial | 
| 供应商设备包: | DO-204AL (DO-41) | 
| 工作温度 - 结: | -65°C ~ 175°C | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | D471N90TXPSA1IR (Infineon Technologies) | DIODE GEN PURP 9KV 760A | 
|   | CMR2U-04 BK PBFREECentral Semiconductor | DIODE GEN PURP 400V 2A SMB | 
|   | RBR3MM60BTFTRROHM Semiconductor | DIODE (RECTIFIER FRD) 60V-VR 3A- | 
|   | VS-6TQ045STRR-M3Vishay General Semiconductor – Diodes Division | DIODE SCHOTTKY 45V 6A TO263AB | 
|   | VS-ETU3006-M3Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 600V 30A TO220-2 | 
|   | GI1404-E3/45Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 200V 8A TO220AC | 
|   | ES3FB R5GTSC (Taiwan Semiconductor) | DIODE GEN PURP 300V 3A DO214AA | 
|   | USD245CRoving Networks / Microchip Technology | RECTIFIER | 
|   | FESB8GTHE3/81Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 400V 8A TO263AB | 
|   | P600A-E3/54Vishay General Semiconductor – Diodes Division | DIODE GEN PURP 50V 6A P600 | 
|   | RS2GA M2GTSC (Taiwan Semiconductor) | DIODE GEN PURP 400V 1.5A DO214AC | 
|   | ESH2B R5GTSC (Taiwan Semiconductor) | DIODE GEN PURP 100V 2A DO214AA | 
|   | RSFDLHRQGTSC (Taiwan Semiconductor) | DIODE GEN PURP 200V 500MA SUBSMA |