类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1000 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 100 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 1000 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | SMB |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RB088LAM-60TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
RS3A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMC |
|
VS-1N3768Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 35A DO203AB |
|
CMSH2-20 TR13 PBFREECentral Semiconductor |
DIODE SCHOTTKY 20V 2A SMB |
|
1N482BRoving Networks / Microchip Technology |
DIODE GEN PURP 30V 200MA DO35 |
|
VS-86HFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A DO203AB |
|
NSB8MTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A TO263AB |
|
S5A-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GPP 5A 50V DO-214AB |
|
VS-6FR20MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
NRVS3MBSanyo Semiconductor/ON Semiconductor |
SR SMB GPPN 3A 1000V |
|
FDH300_QRochester Electronics |
DIODE 125V 0.2A 2-PIN DO-35 T/R |
|
MUR550APFRLRochester Electronics |
RECTIFIER DIODE |
|
NXPSC126506QWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |