类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 16A |
电压 - 正向 (vf) (max) @ if: | 750 mV @ 16 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 500 µA @ 60 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-2 |
供应商设备包: | TO-220AC |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
VS-ETH3006STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
|
SS25-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO214AA |
|
STTH30ST06WYSTMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
|
SR110 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A DO204AL |
|
VSS8D2M10-M3/IVishay General Semiconductor – Diodes Division |
2A, 100V, SLIMSMAW TRENCH SKY RE |
|
SSL34A-F1-0000HF |
DIODE SCHOTTKY 40V 3A DO214AC |
|
HS1DFS M3GTSC (Taiwan Semiconductor) |
50NS, 1A, 200V, HIGH EFFICIENT R |
|
MR852GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
|
JANTXV1N5623USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A D5A |
|
1N5811TRMicrosemi |
DIODE GEN PURP 150V 6A AXIAL |
|
V10P10HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 10A TO277A |
|
VS-40HF60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
FRL1GDiotec Semiconductor |
DIODE FR SOD-123FL 400V 1A |