类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 2.97A (DC) |
电压 - 正向 (vf) (max) @ if: | 2.15 V @ 2.376 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
工作温度 - 结: | -55°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RB540VM-30FHTE-17ROHM Semiconductor |
SCHOTTKY BARRIER DIODES, 30V, 20 |
|
CDBM140L-GComchip Technology |
DIODE SCHOTTKY 40V 1A MINISMA |
|
VS-305UR200Vishay General Semiconductor – Diodes Division |
DIODE GP 2KV 330A DO205AB |
|
M7LDiotec Semiconductor |
DIODE STD SMA 1000V 1A |
|
SE70PJHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2.9A TO277A |
|
US1MHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO214AC |
|
BYV27-050-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 55V 2A SOD57 |
|
VS-4ESH01-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
SS24S-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
|
NXPSC06650D6JWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 6A DPAK |
|
BY133GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.3KV 1A DO204AC |
|
UGA15120HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 15A TO220AC |
|
MBRF1635/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A ITO220AC |