English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Gen2 |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 1200 V |
| 电流 - 平均整流 (io): | 28A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.8 V @ 10 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 100 µA @ 1200 V |
| 电容@vr, f: | 582pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-247-3 |
| 供应商设备包: | TO-247-3 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4942Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
MBRH24035GeneSiC Semiconductor |
DIODE SCHOTTKY 35V 240A D67 |
|
GP10-4004E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
BAS116LPH4-7BZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 85V 215MA 2DFN |
|
VS-SD2500C12KVishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 3000A DO200AC |
|
BYG10Y-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1.6KV 1.5A |
|
V8P15-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 8A TO277A |
|
S1D-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GPP 1A 200V DO-214AC |
|
SR002 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 500MA DO204AL |
|
SL14-F1-3000HF |
DIODE SCHOTTKY 40V 1A SOD123FL |
|
NSVR0520V2T5GSanyo Semiconductor/ON Semiconductor |
20V SCHOTTKY DIODE |
|
VS-10BQ030HM3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO214AA |
|
BAS16D-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 250MA SOD123 |
