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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | - |
| 电压 - 直流反向 (vr) (max): | - |
| 电流 - 平均整流 (io): | - |
| 电压 - 正向 (vf) (max) @ if: | - |
| 速度: | - |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | - |
| 电容@vr, f: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
| 工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UPR30E3/TR7Roving Networks / Microchip Technology |
DIODE GEN PURP 300V 2A POWERMITE |
|
S1JLWHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
SSB43LHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 4A DO214AA |
|
PDS5100Q-13DZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 5A POWERDI5 |
|
HS3KB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AA |
|
SF65GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 6A DO201AD |
|
SS26LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SOD123W |
|
HSM350JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 50V 3A DO214AB |
|
RGL41M-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
VS-ETL0806-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220-2 |
|
S2AA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
AS3PDHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
|
S3D V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
