类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 60 V |
电流 - 平均整流 (io): | 8A |
电压 - 正向 (vf) (max) @ if: | 650 mV @ 8 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 1 mA @ 60 V |
电容@vr, f: | 400pF @ 5V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-277, 3-PowerDFN |
供应商设备包: | TO-277B |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4150-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO35 |
|
SBR8B60P5-7DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 5A POWERDI5 |
|
UH1BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
BYG20G R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A DO214AC |
|
RF101LAM2STFTRROHM Semiconductor |
RF101LAM2STF IS THE HIGH RELIABI |
|
BAV103 L0GTSC (Taiwan Semiconductor) |
DIODE GP 250V 200MA MINIMELF |
|
VS-4EVH02HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 200V SLIMDPAK |
|
1N4148WS-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
|
VS-SD403C16S15CVishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 430A DO200AA |
|
BAL99/DG/B2215Rochester Electronics |
RECTIFIER DIODE |
|
TSPB5H100S S2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 5A SMPC4.0 |
|
CDBC3150-HFComchip Technology |
DIODE SCHOTTKY 150V 3A DO214AB |
|
ACGRTS4001-HFComchip Technology |
DIODE GEN PURP 50V 1A TS/SOD-123 |