类型 | 描述 |
---|---|
系列: | CoolSiC™+ |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 12A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 12 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 190 µA @ 650 V |
电容@vr, f: | 360pF @ 1V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-247-3 |
供应商设备包: | PG-TO247-3 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTS12100EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
|
R2000F-TRectron USA |
DIODE GEN PURP FAST 2KV 1A DO41 |
|
IDB23E60ATMA1Rochester Electronics |
IDB23E60 - FAST SWITCHING EMITTE |
|
B160-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 1A SMA |
|
BAT721,215Nexperia |
DIODE SCHOTTKY 40V 200MA TO236AB |
|
SK33B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AA |
|
SS115L RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SUB SMA |
|
VS-25ETS10STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
|
DLE30C-KC9Rochester Electronics |
RECTIFIER DIODE, 1.5A |
|
NSR0320MW2T1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
SB2H90-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 2A DO204AC |
|
STTH112ASTMicroelectronics |
DIODE GEN PURP 1.2KV 1A SMA |
|
SS16L RHGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A SUB SMA |