English
简体中文
DIODE GEN PURP 150V 3A DO27
SMA-SP/HDBNC-SP G316 3M
ADAPT DB9F TO TERM BLOCK 9POS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bag |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 150 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 150 V |
| 电容@vr, f: | 155pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | DO-27 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S5K-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 5A DO214AB |
|
S3BHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
LS101A-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
|
SS2FH10-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 2A DO-219AB |
|
ES2D-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
STPS560SFYSTMicroelectronics |
AUTOMOTIVE 60 V 5 A LOW DROP LOW |
|
ER3JB-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 3A DO214AA |
|
NSVR201MXT5GSanyo Semiconductor/ON Semiconductor |
RF SCHOTTKY BARRIER DIODE |
|
BAT54LT1Rochester Electronics |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
|
ES2FHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
|
UF4006Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A DO204AL |
|
MUR460-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A DO201AD |
|
VS-12FLR60S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |