







MOSFET N-CH 800V 5.5A ITO220AB
DIODE AVALANCHE 200V 2.1A TO277A
SIZE 7 NYLON STRIP BRUSH, 6" HT
IC DRAM 2GBIT PARALLEL 96FBGA
| 类型 | 描述 |
|---|---|
| 系列: | eSMP® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Avalanche |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 2.1A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 920 mV @ 1.5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 1.2 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 200 V |
| 电容@vr, f: | 37pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-277, 3-PowerDFN |
| 供应商设备包: | TO-277A (SMPC) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
D3001N65TIR (Infineon Technologies) |
DIODE GEN PURP 6.5KV 3910A |
|
|
2A03G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
|
MURS240HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
|
S3J-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
|
|
CMR1U-02M BK PBFREECentral Semiconductor |
DIODE GEN PURP 200V 1A SMA |
|
|
FFSD0865B-F085Sanyo Semiconductor/ON Semiconductor |
650V 8A SIC SBD GEN1.5 |
|
|
C3D10170HWolfspeed - a Cree company |
DIODE SCHOTTKY 1.7KV 14.4A TO247 |
|
|
S15JC R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 15A DO214AB |
|
|
MUR105SHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AA |
|
|
SSA23L-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AC |
|
|
CD214A-R1600J.W. Miller / Bourns |
DIODE GEN PURP 600V 1A DO214AC |
|
|
NTE5980NTE Electronics, Inc. |
R-50 PRV 40A CATH CASE |
|
|
GL34AHE3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |