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MOSFET N-CH 600V 11A D2PAK
650V 4A SIC SBD
RACK STEEL 36X23X63.3 BLK
IC EEPROM 128KBIT I2C 8DIP
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 8.6A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.75 V @ 4 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 200 mA @ 650 V |
| 电容@vr, f: | 258pF @ 1V, 100kHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220-2 |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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