类型 | 描述 |
---|---|
系列: | - |
包裹: | Strip |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 6A |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 6 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 1.5 µs |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
工作温度 - 结: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ES2C-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
FM4004W-WRectron USA |
DIODE STANDARD RECOVERY 400V 1 A |
|
TPMR6G S1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 6A TO277A |
|
FFSP1065ASanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 650V 15A TO220-2 |
|
PMEG2010EA,135Nexperia |
DIODE SCHOTTKY 20V 1A SOD323 |
|
VS-MBRS340-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AB |
|
SF2008PTHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 20A TO247AD |
|
GP3D030A120BSemiQ |
SIC SCHOTTKY DIODE 1200V TO247-2 |
|
STTH8R06DSTMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
|
STTH2002DISTMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
|
CDBA360-GComchip Technology |
DIODE SCHOTTKY 60V 3A DO214AC |
|
12TQ150STRSMC Diode Solutions |
DIODE SCHOTTKY 150V 15A D2PAK |
|
UFS380JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 3A DO214AB |