类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1200 V |
电流 - 平均整流 (io): | 85A |
电压 - 正向 (vf) (max) @ if: | 1.15 V @ 200 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 2 mA @ 1200 V |
电容@vr, f: | - |
安装类型: | Stud Mount |
包/箱: | DO-203AA, DO-5, Stud |
供应商设备包: | DO-5 |
工作温度 - 结: | -65°C ~ 190°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMBD1488LT1GRochester Electronics |
SS SOT23 SWCH DIO SPCL |
|
VS-T110HF120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 110A D-55 |
|
S1AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
VSSAF5N50-M3/6BVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO221AC |
|
UF4004 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
STTH812G-TRSTMicroelectronics |
DIODE GEN PURP 1.2KV 8A D2PAK |
|
VSSB410S-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
|
MURS360BJWeEn Semiconductors Co., Ltd |
ULTRAFAST POWER DIODE |
|
ES3DHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
RF081M2STRROHM Semiconductor |
DIODE GEN PURP 200V 800MA PMDU |
|
BAS20LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 200V 200MA SOT23-3 |
|
PMEG10010ELRXNexperia |
DIODE SCHOTTKY 100V 1A SOD123 |
|
UF1006-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |