R-800V 3A ULTRA FAST
FERRITE BEAD 180 OHM 1806 1LN
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 3 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 75 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 800 V |
电容@vr, f: | 36pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
182NQ030-1SMC Diode Solutions |
DIODE SCHOTTKY 30V 180A PRM1-1 |
|
NTE6055NTE Electronics, Inc. |
R-200 PRV 70A ANODE CASE |
|
RBR3LAM40ATFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
ES1F R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A DO214AC |
|
CDBB1150-HFComchip Technology |
DIODE SCHOTTKY 150V 1A DO214AA |
|
MBRB4030T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 40A D2PAK |
|
VS-HFA04TB60-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO220AC |
|
SS10P4HM3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |
|
BAS716,115Nexperia |
DIODE GEN PURP 75V 200MA SOD523 |
|
CMR1U-02 BK PBFREECentral Semiconductor |
DIODE GEN PURP 200V 1A SMB |
|
VS-18TQ045-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 18A 45V TO-220AC |
|
VS-18TQ040STRLHM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
CMS07(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 2A MFLAT |