DIODE GEN PURP 100V 10A ITO220AB
D38999/21HH1ZE
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 975 mV @ 5 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 35 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 100 V |
电容@vr, f: | 70pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
供应商设备包: | ITO-220AB |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FR107GP-TPMicro Commercial Components (MCC) |
DIODE GPP 1A DO-41 |
|
GP02-35HE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3.5KV 250MA DO204 |
|
EGL41CHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO213AB |
|
1N4449Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO35 |
|
HS1KL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A SUB SMA |
|
MR750RLSanyo Semiconductor/ON Semiconductor |
DIODE GP 50V 6A MICRODE BUTTON |
|
MUR315S M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
|
RL1N4006GRectron USA |
DIODE GLASS 1A 800V A-405 |
|
UF4001GP-APMicro Commercial Components (MCC) |
DIODE GPP ULT FAST 1A DO-41 |
|
10A4Rectron USA |
DIODE GEN PURP 1000V 10A R-6 |
|
SF14G-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
30EPH03Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
|
MA2S11100LPanasonic |
DIODE GEN PURP 80V 100MA SSMINI2 |