English
简体中文
DIODE GEN PURP 100V 1A SUB SMA
PWR XFMR LAMINATED 6VA CHAS MT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 35 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | Sub SMA |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BY229X-400-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
|
SDT10S60IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 10A TO220-2 |
|
SB10-04A3-BTSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 1A DO41 |
|
AR4PDHM3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
|
STTA812DIRGSTMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
|
60HFUR-300Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 60A DO203AB |
|
MBRS1660 MNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 16A TO263AB |
|
VS-30BQ015TRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 3A SMC |
|
BYS10-45HE3/TR3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 1.5A DO214AC |
|
GP10DHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
DSEP29-03AWickmann / Littelfuse |
DIODE GEN PURP 300V 30A TO220AC |
|
RS1GLHRUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
ES1GLHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |