English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 二极管型: | Silicon Carbide Schottky |
| 电压 - 直流反向 (vr) (max): | 650 V |
| 电流 - 平均整流 (io): | 4A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.7 V @ 4 A |
| 速度: | No Recovery Time > 500mA (Io) |
| 反向恢复时间 (trr): | 0 ns |
| 电流 - 反向泄漏@ vr: | 170 µA @ 650 V |
| 电容@vr, f: | 125pF @ 1V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | TO-220-2 |
| 供应商设备包: | TO-220AC |
| 工作温度 - 结: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UG56GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A DO201AD |
|
2A07-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 1KV 2A DO15 |
|
1N4936GP-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
FESE16DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO220AC |
|
VS-MURB1520TRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 15A D2PAK |
|
MRA4005T1Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 1A SMA |
|
DB2W40300LPanasonic |
DIODE SCHOTTKY 40V 3A MINI2 |
|
CDBA320-GComchip Technology |
DIODE SCHOTTKY 20V 3A DO214AC |
|
VS-60APF12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
|
S10G-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 10A DO214AB |
|
EGP10BHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
1N5393GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC |
|
TVR10G-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
