类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Obsolete |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 6A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 6 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 200 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 800 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
工作温度 - 结: | -50°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5821HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO201AD |
|
STPS1045BTRRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
|
60HFU-300Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 60A DO203AB |
|
RL1N4003Rectron USA |
DIODE GEN PURP 1000V 1A A-405 |
|
MBRF745HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 45V 7.5A ITO220AC |
|
SGL41-20/96Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A DO213AB |
|
1N5402-E3/51Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
|
ES3C M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 3A DO214AB |
|
SRAF560HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 5A ITO220AC |
|
STTH5R06G-TRSTMicroelectronics |
DIODE GEN PURP 600V 5A D2PAK |
|
FR102TASMC Diode Solutions |
DIODE GEN PURP 100V 1A DO41 |
|
2A05-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 2A DO15 |
|
HER107G-APMicro Commercial Components (MCC) |
DIODE GPP HE 1A DO-41 |