English
简体中文
DIODE GEN PURP 800V 800MA SUBSMA
MODULE DDR2 SDRAM 1GB 800MB/S
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 800 V |
| 电流 - 平均整流 (io): | 800mA |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 800 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 500 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | Sub SMA |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BYC30W-1200PQWeEn Semiconductors Co., Ltd |
DIODE GEN PURP 1.2KV 30A TO247-2 |
|
S1ALHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
SF1605G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 16A TO220AB |
|
FR202GP-APMicro Commercial Components (MCC) |
DIODE GPP GAST 2A DO-15 |
|
DSF05S30U(TPH3,F)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 500MA USC |
|
VSKE320-20Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 320A MAGNAPAK |
|
VS-MUR820PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
D255N02BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 200V 255A |
|
SE07PG-E3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 700MA DO220 |
|
10A8Rectron USA |
DIODE GEN PURP 1000V 10A R-6 |
|
RS1GLHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
DSI17-08AWickmann / Littelfuse |
DIODE AVALANCHE 800V 25A DO203AA |
|
UES2602Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 30A TO204AA |