类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 500 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 35 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 500 V |
电容@vr, f: | 140pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | TO-220-2 Full Pack |
供应商设备包: | ITO-220AC |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N6620UMicrosemi |
DIODE GEN PURP 200V 1.2A A-MELF |
|
1N4305_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 300MA DO35 |
|
SS19LHRFGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A SUB SMA |
|
DB2440100LPanasonic |
DIODE SCHOTTKY 40V 1A TMINIP2 |
|
SS5P5-E3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A |
|
S1PJHE3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
|
S1GL RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
ES1FL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |
|
HS1ML RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A SUB SMA |
|
VS-31DQ09GTRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 3.3A C16 |
|
S1M-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SMA |
|
HFA04SD60SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A DPAK |
|
RS1BL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 800MA SUBSMA |