English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 200 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 600 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MP740-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
1A6TASMC Diode Solutions |
DIODE GEN PURP 800V 1A R-1 |
|
JAN1N6624UMicrosemi |
DIODE GEN PURP 900V 1A A-MELF |
|
BYV29-300HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO220AC |
|
1N459A_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 500MA DO35 |
|
MA2C16700EPanasonic |
DIODE GEN PURP 75V 100MA DO34 |
|
RGP20GHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
|
SS5P6-E3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 5A TO277A |
|
SR303 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO201AD |
|
S1KA-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
BYS10-25HE3/TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 25V 1.5A DO214AC |
|
SF1607GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 16A TO220AB |
|
GI828-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 5A P600 |
