类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 35 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 840 mV @ 20 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 35 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-2 Full Pack, Isolated Tab |
供应商设备包: | ITO-220AC |
工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SB3H100HE3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 3A DO201AD |
|
1N4002 BKCentral Semiconductor |
DIODE GEN PURPOSE DO41 |
|
SF46GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
2A03-APMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 2A DO15 |
|
CD214A-FS1150J.W. Miller / Bourns |
DIODE GEN PURP 150V 1A DO214AC |
|
MURS360SHE3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO214AA |
|
20ETF04SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 20A D2PAK |
|
RSFBL MQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 500MA SUBSMA |
|
RS3KHE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
|
FM503BRectron USA |
DIODE GEN GLASS 2A 200V SMB |
|
DGS10-018AS-TUBWickmann / Littelfuse |
DIODE SCHOTTKY 180V 15A TO263AB |
|
MBR1035HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 35V 10A TO220AC |
|
RGP02-14EHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 500MA DO204 |