IC DRAM 64MBIT PAR 86TSOP II
DIODE GPP HE 3A DO-201AD
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1000 V |
电流 - 平均整流 (io): | 3A |
电压 - 正向 (vf) (max) @ if: | - |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 75 ns |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | 50pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | DO-201AD, Axial |
供应商设备包: | DO-201AD |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BY229B-400HE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
15ETX06-1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO262 |
|
R3000F-APMicro Commercial Components (MCC) |
DIODE GEN PURP 3KV 200MA DO15 |
|
8EWF12STRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A DPAK |
|
SSL32 M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 3A DO214AB |
|
SURF81620CTGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 16A TO220FP |
|
UF4006 TRCentral Semiconductor |
DIODE GEN PURP 800V 1A DO41 |
|
GP10DEHM3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
MBRF7H45HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7.5A ITO220AC |
|
1N5398GP-APMicro Commercial Components (MCC) |
DIODE GPP 1.5A DO-15 |
|
1N4935GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
HFA16TB120STRRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
|
SFAF1607G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 16A ITO220AC |