English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 40 V |
| 电流 - 平均整流 (io): | 5.5A |
| 电压 - 正向 (vf) (max) @ if: | 510 mV @ 5 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 3 mA @ 40 V |
| 电容@vr, f: | 405pF @ 5V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 供应商设备包: | D-Pak |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GP08GEHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 800MA DO204 |
|
RMPG06DHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
19TQ015STRRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 19A D2PAK |
|
MBRB1645Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 16A D2PAK |
|
D850N28TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.8KV 850A |
|
MBR160Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 1A AXIAL |
|
1N4153_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA DO35 |
|
BYW100-200RLSTMicroelectronics |
DIODE GEN PURP 200V 1.5A DO15 |
|
FR156GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO204AC |
|
SF1601GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 16A TO220AB |
|
S4PGHM3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
|
DB2U30900LPanasonic |
DIODE SCHOTTKY 30V 100MA USSMINI |
|
ER3ESMC Diode Solutions |
SMT SUPER FAST RECTIFIER |
