English
简体中文
DIODE GEN PURP 200V 5A GP20
IC DRAM 1GBIT PARALLEL 134FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SUPERECTIFIER® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 950 mV @ 5 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 50 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 95pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | GP20 |
| 工作温度 - 结: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
8TQ100STRRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A D2PAK |
|
1N6624USRoving Networks / Microchip Technology |
DIODE GEN PURP 990V 1A A-MELF |
|
SS22LHMQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 2A SUB SMA |
|
RL206-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 2A DO15 |
|
CDBD8100-GComchip Technology |
DIODE SCHOTTKY 100V 8A TO263 |
|
EGL41DHE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
SF51-APMicro Commercial Components (MCC) |
DIODE GPP HE 5A DO-201AD |
|
USB260HE3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
1N4002/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
SS2P5HE3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO220AA |
|
VS-HFA08TB60STRRPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
|
RB520ZS-308OPT2RROHM Semiconductor |
DIODE SCHOTTKY 100MA GMD2 |
|
IDH12S60CAKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 12A TO220-2 |