English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, Superectifier® |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Obsolete |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 200 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 150 ns |
| 电流 - 反向泄漏@ vr: | 5 µA @ 200 V |
| 电容@vr, f: | 15pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
| 工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DA2S10100LPanasonic |
DIODE GEN PURP 80V 100MA SSMINI2 |
|
MA2C17900EPanasonic |
DIODE GEN PURP 80V 200MA DO34 |
|
VS-MBR340TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A C16 |
|
NXPSC20650QWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 20A TO220AC |
|
ES1ALHMHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
AS3PJHM3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
|
HER601-APMicro Commercial Components (MCC) |
DIODE GPP HE 6A R-6 |
|
EGF1CHE3/5CAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214BA |
|
MURS260HE3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
FES16CTRSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 16A TO220AC |
|
BAS16_L99ZSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 85V 200MA SOT23-3 |
|
SS26-E3/51TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AA |
|
SARS02Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
