English
简体中文
DIODE SCHOTTKY 100V 8A DO214AB
ENCLOSURE ASSY 44U X 26D
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 100 V |
| 电流 - 平均整流 (io): | 8A |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 8 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 100 V |
| 电容@vr, f: | - |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RFN10B3STLROHM Semiconductor |
DIODE GEN PURP 350V 10A CPD |
|
S3AB-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMB |
|
DB2460600LPanasonic |
DIODE SCHOTTKY 60V 3A TMINIP2 |
|
1N4001 TRCentral Semiconductor |
DIODE GEN PURPOSE DO41 |
|
ISL9R8120S3STSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1.2KV 8A TO263 |
|
STTA306B-TRSTMicroelectronics |
DIODE GEN PURP 600V 3A DPAK |
|
SRA2060HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 20A TO220AC |
|
VS-8EWS08STRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
|
VS-8ETH03STRRPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
|
2A02GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
|
1N4002GL TRCentral Semiconductor |
DIODE GEN PURP 100V 1A DO41 |
|
FR506GP-TPMicro Commercial Components (MCC) |
DIODE GPP FAST 5A DO-201AD |
|
12TQ035STRRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 15A D2PAK |