English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 1000 V |
| 电流 - 平均整流 (io): | 2.5A |
| 电压 - 正向 (vf) (max) @ if: | 1 V @ 2.5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 µA @ 1000 V |
| 电容@vr, f: | 35pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | R-3, Axial |
| 供应商设备包: | R-3 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ESH3DHE3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
|
SSB44HE3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AA |
|
MBRB10H100HE3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A TO263AB |
|
VS-HFA16TB120STRLPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A D2PAK |
|
EGL34AHE3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
|
BA158G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
ES1DHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
SFAF1002G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 10A ITO220AC |
|
HER102G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
DB2L33500L1Panasonic |
DIODE SCHOTTKY 30V 100MA 0201 |
|
8ETH03Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO220AC |
|
STTH108RLSTMicroelectronics |
DIODE GEN PURP 800V 1A DO41 |
|
SF25-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 2A DO-15 |
