类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 4A |
电压 - 正向 (vf) (max) @ if: | 1.25 V @ 4 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | 65pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AB, SMC |
供应商设备包: | DO-214AB (SMC) |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N6621UMicrosemi |
DIODE GEN PURP 400V 1.2A A-MELF |
|
VS-60CPF02PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
|
IDH20G65C5XKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 20A TO220-2 |
|
SFAF501G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 5A ITO220AC |
|
SF802G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 8A TO220AB |
|
US1JHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
D251N16BXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.6KV 255A |
|
GP10QHM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 1A DO204AL |
|
STTH2R02QRLSTMicroelectronics |
DIODE GEN PURP 200V 2A DO15 |
|
SS24T3HSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY |
|
VS-MBRD340TRRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DPAK |
|
RS1KLHRUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 800MA SUBSMA |
|
RB521ZS-40T2RROHM Semiconductor |
DIODE SCHOTTKY 100MA 8SMD |