类型 | 描述 |
---|---|
系列: | eSMP® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 30 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 560 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 800 µA @ 30 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | TO-277, 3-PowerDFN |
供应商设备包: | TO-277A (SMPC) |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
05A6Rectron USA |
DIODE 1A 800V SOD-123F |
|
IDH04G65C5XKSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 4A TO220-2 |
|
1N4942GP-TPMicro Commercial Components (MCC) |
DIODE GPP FAST 1A DO-41 |
|
GP10DHM3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
SDM30004Microsemi |
DIODE GEN PURP 400V 300A MODULE |
|
BAV20_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 200MA DO35 |
|
NSB8KTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A TO263AB |
|
CN648 BKCentral Semiconductor |
DIODE GP 500V 400MA DO-41SP |
|
SK12H45 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 45V 12A DO201AD |
|
RS1ALHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 800MA SUB SMA |
|
UH1DHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
DB2141300LPanasonic |
DIODE SCHOTTKY 40V 2A SMINI2 |
|
RS3G M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |