English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 60 V |
| 电流 - 平均整流 (io): | 2A |
| 电压 - 正向 (vf) (max) @ if: | 500 mV @ 2 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 500 µA @ 40 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AC, DO-15, Axial |
| 供应商设备包: | DO-15 |
| 工作温度 - 结: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ESH2PC-E3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO220AA |
|
D841S45TS01XDLA1IR (Infineon Technologies) |
DIODE GEN PURP BG-D7514-1 |
|
VS-MBRD330PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DPAK |
|
UF5406GP-TPMicro Commercial Components (MCC) |
DIODE GP 600V 3A DO201AD |
|
S1JL MHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
UG54GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO201AD |
|
EGP30A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A GP20 |
|
D850N34TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 3.4KV 850A |
|
UG8JTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
HS18145Microsemi |
DIODE SCHOTTKY 45V 180A HALFPAK |
|
RGP02-12E-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 500MA DO204AL |
|
1N5392GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO204AC |
|
DSEP75-06ARWickmann / Littelfuse |
DIODE GP 600V 75A ISOPLUS247 |
