English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 400 V |
| 电流 - 平均整流 (io): | 5A |
| 电压 - 正向 (vf) (max) @ if: | 1.25 V @ 3 A |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 50 ns |
| 电流 - 反向泄漏@ vr: | 20 µA @ 400 V |
| 电容@vr, f: | 90pF @ 10V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | Axial |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6221030PSOOPowerex, Inc. |
DIODE GP 1KV 300A DO200AA R62 |
|
|
1N1128RARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
JANTX1N1615RRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 15A DO203AA |
|
|
S40MRGeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 40A DO5 |
|
|
UF3006-HFComchip Technology |
DIODE GEN PURP 600V 3A DO201AA |
|
|
VS-SD300R16PCVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 300A DO9 |
|
|
JTX1N5620Semtech |
D MET 1A STD 800V HR |
|
|
S6DGeneSiC Semiconductor |
DIODE GEN PURP 200V 6A DO4 |
|
|
SJPJ-D3VLSanken Electric Co., Ltd. |
DIODE SCHOTTKY SMD |
|
|
BYG23MHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO214AC |
|
|
MUR880Rochester Electronics |
RECTIFIER DIODE, 8A, 800V |
|
|
LSR104 L0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A MELF |
|
|
1N4256Roving Networks / Microchip Technology |
RECTIFIER DIODE |
