类型 | 描述 |
---|---|
系列: | Z-Rec® |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
二极管型: | Silicon Carbide Schottky |
电压 - 直流反向 (vr) (max): | 650 V |
电流 - 平均整流 (io): | 25.5A (DC) |
电压 - 正向 (vf) (max) @ if: | 1.8 V @ 8 A |
速度: | No Recovery Time > 500mA (Io) |
反向恢复时间 (trr): | 0 ns |
电流 - 反向泄漏@ vr: | 50 µA @ 650 V |
电容@vr, f: | 395pF @ 0V, 1MHz |
安装类型: | Surface Mount |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
供应商设备包: | TO-252-2 |
工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM01AWSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 1A AXIAL |
|
VS-95PF140WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
|
SRT15HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 1A TS-1 |
|
S5GB-HFComchip Technology |
RECTIFIER GEN PURP 400V 5A SMB |
|
FR16DR05GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 16A DO4 |
|
VS-70U60AMAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 300A DO9 |
|
HER308GA-GComchip Technology |
DIODE GEN PURP 1KV 3A DO201AA |
|
1N3293Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
A330MPowerex, Inc. |
DIODE GEN PURP 600V 1200A DO200 |
|
5821SMG/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 30V 3A DO215AB |
|
SE100PWDHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 10A SLIMDPAK |
|
1SS119-041TA-E-QRochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
HER108BULKEIC Semiconductor, Inc. |
DIODE GEN PURP 1000V 1A DO41 |