类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.4 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | Axial |
供应商设备包: | - |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GE10MPS06AGeneSiC Semiconductor |
650V 10A TO-220-2 SIC SCHOTTKY M |
|
VS-72HFR80MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 70A DO203AB |
|
ES1G-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 40 |
|
FR70G05GeneSiC Semiconductor |
DIODE GEN PURP 400V 70A DO5 |
|
SR1503 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 15A R-6 |
|
VS-3EJU06-M3/6BVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO221AC |
|
AP01CSanken Electric Co., Ltd. |
DIODE GEN PURP 1KV 200MA AXIAL |
|
NSF8MTHE3_A/PVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A ITO220AC |
|
HSM8100G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 100V 8A DO215AB |
|
CPD65-BAV45-CTCentral Semiconductor |
DIODE GEN PURP 20V 50MA DIE |
|
HSM140JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 40V SMAJ |
|
SJPJ-L3VRSanken Electric Co., Ltd. |
DIODE SCHOTTKY SMD |
|
JAN1N5551USRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A B-MELF |