English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 800 V |
| 电流 - 平均整流 (io): | 5A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.15 V @ 5 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
| 电容@vr, f: | 25pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMC) |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HSM540J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 5A 40V SMCJ |
|
|
JANTX1N3595A-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO35 |
|
|
ES2BB-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 10 |
|
|
CDBU54Comchip Technology |
DIODE SCHOTTKY 30V 200MA 0603 |
|
|
HVC190KRF-ERochester Electronics |
DIODE FOR ATTENUATOR |
|
|
JANTX1N5553USRoving Networks / Microchip Technology |
DIODE GEN PURP 800V 3A B-MELF |
|
|
6A100G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 6A R-6 |
|
|
SCFS12000Semtech |
DIODE GEN PURP 12KV 1.5A AXIAL |
|
|
1N3293AGeneSiC Semiconductor |
DIODE GEN PURP 600V 100A DO205AA |
|
|
BYG24JHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO214 |
|
|
UFR3130PFRoving Networks / Microchip Technology |
RECTIFIER |
|
|
VS-70HFLR40S02MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
|
|
PMEG060T050ELPEZNexperia |
PMEG060T050ELPE/SOT1289B/CFP15 |
