类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/297 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 35A |
电压 - 正向 (vf) (max) @ if: | 1.4 V @ 110 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTXV1N5617Semtech |
D MET 1A FAST 400V HRV |
|
SFT11G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A TS-1 |
|
A177DPowerex, Inc. |
DIODE GEN PURP 400V 100A DO205AA |
|
HER603G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 6A R-6 |
|
RHRG7570Rochester Electronics |
RECTIFIER DIODE |
|
JTX1N4947Semtech |
D MET 1A FAST 800V HR |
|
RM 1V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 1A AXIAL |
|
1N1127Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
SFT18G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
|
XBS023P11R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
|
BYG24JHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO214 |
|
1N3910RRoving Networks / Microchip Technology |
FAST RECOVERY RECTIFIER |
|
JANTXV1N5615Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |