类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 400 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.3 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 35 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 400 V |
电容@vr, f: | 10pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | T-18, Axial |
供应商设备包: | TS-1 |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5552/TRRoving Networks / Microchip Technology |
STD RECTIFIER |
|
R20410Roving Networks / Microchip Technology |
RECTIFIER |
|
VS-70HF160MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 70A DO203AB |
|
SD125SC150A.T1SMC Diode Solutions |
PIV 150V IO 15A CHIP SIZE 125MIL |
|
VS-40HFL100S05MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |
|
HSK83TL-S-ERochester Electronics |
RECTIFIER DIODE, 0.15A |
|
PMEG1201AESFC/S500315Rochester Electronics |
RECTIFIER DIODE, SOD962 |
|
XBS306P11R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
|
CRF02(TE85L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 800V 500MA S-FLAT |
|
JAN1N6623Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A AXIAL |
|
S150KGeneSiC Semiconductor |
DIODE GEN PURP 800V 150A DO205AA |
|
JANTXV1N3070UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO7 |
|
JANTX1N1206ARoving Networks / Microchip Technology |
DIODE GEN PURP 600V 12A DO203AA |