类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/578 |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 150 V |
电流 - 平均整流 (io): | 300mA |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 20 ns |
电流 - 反向泄漏@ vr: | 500 nA @ 150 V |
电容@vr, f: | 2.5pF @ 0V, 1MHz |
安装类型: | Through Hole |
包/箱: | D, Axial |
供应商设备包: | - |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
HER107BULKEIC Semiconductor, Inc. |
DIODE GEN PURP 800V 1A DO41 |
|
SJPB-H6Sanken Electric Co., Ltd. |
DIODE SCHOTTKY 60V 2A SJP |
|
RA201836XXPowerex, Inc. |
DIODE GP 1.8KV 3600A POWRDISC |
|
W2899MC480Wickmann / Littelfuse |
RECTIFIER DIODE |
|
SB540B-GComchip Technology |
DIODE SCHOTTKY 40V 5A DO201AD |
|
VS-40HFLR60S02MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
1N4148-1E3Roving Networks / Microchip Technology |
GLASS AXIAL SWITCHING DIODE |
|
UG06DHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 600MA TS-1 |
|
JANTXV1N1186Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 35A DO203AB |
|
SRT12HA1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A TS-1 |
|
LSM150G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 50V 1A DO215AA |
|
ND171N18KHPSA1IR (Infineon Technologies) |
DIODE GP 1.8KV 171A BG-PB34-1 |
|
1N1199RRoving Networks / Microchip Technology |
STANDARD RECTIFIER |