类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 200 V |
电流 - 平均整流 (io): | 450A |
电压 - 正向 (vf) (max) @ if: | 1.6 V @ 1500 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | 11 µs |
电流 - 反向泄漏@ vr: | 50 mA @ 200 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-200AA, A-PUK |
供应商设备包: | DO-200AA, R62 |
工作温度 - 结: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
V3PM10-M3/IVishay General Semiconductor – Diodes Division |
SCHOTTKY RECTIFIER 3A 100V SMP |
|
BYG24DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO214 |
|
GMA01U-AT1Rochester Electronics |
RECTIFIER DIODE, 0.12A |
|
BYM07-50HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
|
EGP51D-E3/CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A DO201AD |
|
S1JAL M3GTSC (Taiwan Semiconductor) |
1A, 600V, STANDARD RECOVERY RECT |
|
JTXV1N5811USSemtech |
D MET 6A SFST 150V HRV SM |
|
PMEG3010ESB315Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
FR16GR02GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 16A DO4 |
|
RURG8050Rochester Electronics |
RECTIFIER DIODE |
|
SD125SC150B.T2SMC Diode Solutions |
PIV 150V IO 15A CHIP SIZE 125MIL |
|
VS-SD600N12PCVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 600A B8 |
|
S25DRGeneSiC Semiconductor |
DIODE GEN PURP 200V 25A DO220AA |