English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 90 V |
| 电流 - 平均整流 (io): | 700mA |
| 电压 - 正向 (vf) (max) @ if: | 810 mV @ 700 mA |
| 速度: | Fast Recovery =< 500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 1 mA @ 90 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Axial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
UES2605RRoving Networks / Microchip Technology |
RECTIFIER |
|
|
SD4000C40RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 4KV 4450A B-44 |
|
|
UPS190/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 90V POWERMITE |
|
|
RO 2BV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 800V 1.2A AXIAL |
|
|
VS-88HFR40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
|
|
A451LPowerex, Inc. |
DIODE GEN PURP 2KV 2500A DO200AC |
|
|
BYG22DHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
|
|
S25MGeneSiC Semiconductor |
DIODE GEN PURP 1KV 25A DO203AA |
|
|
R7220405ESOOPowerex, Inc. |
DIODE GEN PURP 400V 500A DO200AB |
|
|
EGP51G-E3/DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 5A DO201AD |
|
|
BYG10MHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A DO214AC |
|
|
RKH0160BKJ#P1Rochester Electronics |
DIODE FOR HIGH VOLTAGE SWITCHING |
|
|
VS-72HFR160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 70A DO203AB |
