English
简体中文
CAP CER 2.2PF 16V C0G/NP0 1206
DIODE GEN PURP 50V 1A TS-1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 1A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 1 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 5 µA @ 50 V |
| 电容@vr, f: | 10pF @ 4V, 1MHz |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | TS-1 |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
1N5231B_NLRochester Electronics |
RECTIFIER DIODE |
|
|
SMBT1504T3GRochester Electronics |
DIODE STD REC 1.5A 400V SOT23 |
|
|
1N6097RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 30V DO5 |
|
|
BYM12-50HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
|
|
1T5G A1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A TS-1 |
|
|
1N5401GP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 3A DO201AD |
|
|
FR6A02GeneSiC Semiconductor |
DIODE GEN PURP 50V 6A DO4 |
|
|
ND261N26KHPSA1IR (Infineon Technologies) |
DIODE GP 2.6KV 260A BG-PB50ND-1 |
|
|
RKH0160AKU#P6Rochester Electronics |
DIODE FOR HIGH VOLTAGE SWITCHING |
|
|
SS34C-HFComchip Technology |
DIODE SCHOTTKY 3A 40V SMC |
|
|
JANTXV1N3766Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 35A DO203AB |
|
|
MUR5005GeneSiC Semiconductor |
DIODE GEN PURP 50V 50A DO5 |
|
|
RURU8080Rochester Electronics |
RECTIFIER DIODE |