English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 400 V |
| 电流 - 平均整流 (io): | 150A |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 50 µA @ 400 V |
| 电容@vr, f: | - |
| 安装类型: | Stud Mount |
| 包/箱: | DO-205AA, DO-8, Stud |
| 供应商设备包: | DO-205AA (DO-8) |
| 工作温度 - 结: | -65°C ~ 200°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N5309Solid State Inc. |
FED 3 MA DO35 |
|
|
VS-180NQ045PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 180A D-67 |
|
|
JTXV1N5420Semtech |
D MET 3A FAST 600V HR HRV |
|
|
US3GB-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 40 |
|
|
V12PM15HM3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
|
|
SE100PWBHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 10A SLIMDPAK |
|
|
JANTXV1N5190Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
|
W3842MC280Wickmann / Littelfuse |
RECTIFIER DIODE |
|
|
HER103G-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO41 |
|
|
AU02VSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 800MA AXIAL |
|
|
SBRS5641T3GRochester Electronics |
SCHOTTKY BARRIER RECTIFIER |
|
|
1N3174ARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
|
1N3263Powerex, Inc. |
DIODE GEN PURP 200V 160A DO205AB |
