类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
二极管型: | Standard, Reverse Polarity |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 320A |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 300 A |
速度: | Standard Recovery >500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-205AB, DO-9, Stud |
供应商设备包: | DO-205AB, DO-9 |
工作温度 - 结: | -60°C ~ 180°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NSR0630P2T5GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 0.6A, |
|
SMAJ5817E3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 20V SMAJ |
|
MMBD3595Sanyo Semiconductor/ON Semiconductor |
DIE DIODE GENERAL PURPOSE |
|
SMBD1102LT3Rochester Electronics |
SS SOT23 SWCH DIO SPCL |
|
1N4005BULKEIC Semiconductor, Inc. |
STD 1A, CASE TYPE: DO-41 |
|
R7220805ESOOPowerex, Inc. |
DIODE GEN PURP 800V 500A DO200AB |
|
RS3KB-HFComchip Technology |
RECTIFIER FAST RECOVERY 800V 3A |
|
HT12G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A TS-1 |
|
HSM550G/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 50V 5A DO215AB |
|
MBR8035RGeneSiC Semiconductor |
DIODE SCHOTTKY REV 35V DO5 |
|
EH 1V1Sanken Electric Co., Ltd. |
DIODE GEN PURP 400V 600MA AXIAL |
|
6A10GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 6A R-6 |
|
R9G03012XXPowerex, Inc. |
DIODE GP 3KV 1200A DO200AA R62 |