IC DRAM 128MBIT PARALLEL 90TFBGA
DIODE GEN PURP 100V 600MA TS-1
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 600mA |
电压 - 正向 (vf) (max) @ if: | 950 mV @ 600 mA |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 15 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 100 V |
电容@vr, f: | 9pF @ 4V, 1MHz |
安装类型: | Through Hole |
包/箱: | T-18, Axial |
供应商设备包: | TS-1 |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N1203ARoving Networks / Microchip Technology |
STANDARD RECTIFIER |
|
PMEG045T150EPD139Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
RS5AC-HFComchip Technology |
RECTIFIER FAST RECOVERY 50V 5A S |
|
RD0506LS-SB5Rochester Electronics |
ULTRAHIGH-SPEED DIFFUSED JUNCTIO |
|
VS-45APS08L-M3Vishay General Semiconductor – Diodes Division |
NEW INPUT DIODES - TO-247 |
|
R7012803XXUAPowerex, Inc. |
DIODE GEN PURP 2.8KV 300A DO200 |
|
SD060SE45B.T2SMC Diode Solutions |
PIV 45V IO 3A CHIP SIZE 60MIL SQ |
|
CMF01(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
DIODE GEN PURP 600V 2A MFLAT |
|
HER302GT-GComchip Technology |
DIODE GEN PURP 100V 3A DO201AA |
|
SCHS2500Semtech |
DIODE GEN PURP 2.5KV 2A AXIAL |
|
JANTX1N4459RRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 15A DO203AA |
|
VSSAF5L45HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 5A DO221AC |
|
1N5712UBRoving Networks / Microchip Technology |
SCHOTTKY DIODE |